Santa Clara, CA and Kyoto, Japan, July 01, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the launch of the RY7P250BM, a 100V power MOSFET optimized for hot-swap circuits in 48V power sys
Santa Clara, CA and Kyoto, Japan, June 25, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of the  BM6GD11BFJ-LB, an isolated gate driver IC optimized for driving 600V-cla
Santa Clara, CA, June 12, 2025 (GLOBE NEWSWIRE) -- As artificial intelligence continues to redefine the boundaries of computing, the infrastructure powering these advancements must evolve in parallel.

ROHM Develops Breakthrough AI-Equipped MCU

05:00pm, Wednesday, 04'th Jun 2025
The industry's first MCU capable of predicting equipment anomalies via on-device learning and inference without a network The industry's first MCU capable of predicting equipment anomalies via on-devi
Santa Clara, CA and Kyoto, Japan, April 28, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced that SMA Solar Technology AG, a leading global specialist in photovoltaic and storage system tec
Santa Clara, CA and Kyoto, Japan, April 17, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced they will participate in PCIM Expo and Conference, the leading international event for power ele
Santa Clara, CA and Kyoto, Japan, April 10, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor has developed N-channel power MOSFETs featuring industry-leading* low ON-resistance and wide SOA capability. The
Santa Clara, CA and Kyoto, Japan, March 26, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the new KA2008-B07N70A thermal printhead, compatible with a 2-cell Li-ion battery (7.2V). The pr
Santa Clara, CA and Kyoto, Japan, March 12, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor U.S.A., LLC, today announced they will participate in APEC 2025, the premier power electronics conference and ex
TOLL package 650V GaN HEMTs contribute to improving power supply efficiency TOLL package 650V GaN HEMTs contribute to improving power supply efficiency
Accelerating development towards the mass production of GaN devices for automotive applications Accelerating development towards the mass production of GaN devices for automotive applications
Low-capacitance design prevents signal degradation, while high surge current rating provides enhanced protection for automotive electronic devices Low-capacitance design prevents signal degradation, w
Delivers an authentic listening experience by expressing the three elements of spatial reverberation, quietness, and dynamic range while preserving the natural “texture” of musical instruments Del
Price range is less than one-tenth that of conventional devices while achieving remarkable space-savings Price range is less than one-tenth that of conventional devices while achieving remarkable spac
Santa Clara, CA and Kyoto, Japan, Dec. 04, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the adoption of its EcoSiC™ products, including SiC MOSFETs and SiC Schottky barrier diodes (SB
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